![]() ![]() Li, Mn-doped topological insulators: a review. Yang, Robust topological surface transport with weak localization bulk channels in polycrystalline Bi 2Te 3. Chu, Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi 2Te 3 topological insulator. Wang, Crossover between weak antilocalization and weak localization of bulk states in ultrathin Bi 2Se 3 film. Srivastava, Paramagnetism, hopping conduction, and weak localization in highly disordered pure and Dy-doped Bi 2Se 3 nanoplates. Banerjee, Two-dimensional weak anti-localization in Bi 2Te 3 thin film grown on Si (111)-(7×7) surface by molecular beam epitaxy. Hossain, Magnetotransport properties of the correlated topological nodal-line semimetal YbCdGe. Das, Influence of magnetic (Fe) and non-magnetic (In) doping on structural, magnetic, and weak anti-localization properties of Bi 2Te 3 topological insulator. Samarth et al., Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator. Ganesan, Correlation between magnetic ordering and crossover from weak anti-localization (WAL) to weak localization (WL) in cobalt and manganese-doped Bi 0.94Sb 0.06 topological insulator nanoparticles. Wang et al., Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator. Kane, Probing neutral Majorana fermion edge modes with charge transport. Zhang, Inducing a Magnetic Monopole with Topological Surface States. ![]() Fang, Quantized anomalous hall effect in magnetic topological insulators. Macdonald, Giant magneto-optical Kerr effect and universal Faraday effect in thin-film topological insulators. Nagaosa, Surface- Quantized Anomalous Hall Current and the Magnetoelectric Effect in Magnetically Disordered Topological Insulators. Fazzio, Topological insulator Bi 2Se 3(111) surface doped with transition metals: An ab initio investigation. Honolka, Electronic and transport properties of the Mn-doped topological insulator Bi 2Te 3: a first-principles study. Franz, Surface magnetic ordering in topological insulators with bulk magnetic dopants. Stern, Magnetic instability on the surface of topological insulators. Chulkov, Spin-polarized states of matter on the surface of a three-dimensional topological insulator with implanted magnetic atom. Freeman, Topological and magnetic phase transition in Bi 2Se 3 thin films with magnetic impurities. Yao, Stability, electronic, and magnetic properties of magnetically doped topological insulators Bi 2Se 3, Bi 2Te 3 and Sb 2Te 3. Felser, Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators, arXiv:1502.00604v2 (2015). Zhang, Weak antilocalization effect and high-pressure transport properties of ScPdBi single crystal. Xiu et al., Weak anti-localization and quantum oscillations of surface states in topological insulator Bi 2Se 2Te. Zhang, Weak antilocalization effect and noncentrosymmetric superconductivily in a topologically nontrivial semimetal LuPdBi. Kim, Weak antilocalization, spin-orbit interaction, and phase coherence length of a Dirac semimetal Bi 0.97Sb 0.03. ![]() Zhang, Topological insulators in Bi 2Se 3, Bi 2Te 3 and Sb 2Te 3 with a single Dirac cone on the surface. Shen, 2012 Topological insulators: Dirac equation in condensed matter, Spring Series in Solid- State Science 174 Zhang, Topological insulators and superconductors. Kane, Colloquium: Topological insulators. Importantly, this magnetic doping has a strong impact on hostʼs quantum-transport, as there exists a gradual transformation of hostʼs weak anti-localization (WAL) effect into quadratic as well as fluctuating nature in the magneto-conductance (MC) study. Electrical transport indicates the preservation of hostʼs metallic nature for low Mn-doping however, an anomaly in \(\) –T plot at 100 K is noticed for high Mn-doping, which justifies the influence of magnetic dopants in electron transport. However, there exists Griffith phase at low temperatures in the paramagnetic background. The magnetic analysis establishes that the nature of magnetism changes from diamagnetic to paramagnetic with the increment of Mn-content. This phenomenon is also supported by the XPS and HR-TEM study. XRD profiles along with Rietveld refinement infer that, most of the doped-Mn atoms substitute Bi-sites and few Mn-atoms take interstitial positions in host Bi 2Te 3. Bi 2-xMn xTe 3 (where x = 0, 0.05, and 0.25) has been prepared using the programmable heat treatment of vacuum-sealed precursors. In this paper, we have explored the influence of magnetic (Mn) doping on structural, compositional, and magneto-electric transport properties of host Bi 2Te 3. Bi 2Te 3 is one of the favorite materials in material-science community due to its well-known topological and thermoelectric properties. ![]()
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